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Best IGBT Transistors - Buying Guide

Last Updated: 11/15/2018

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  #1

(PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD

 Ean: 0616880101364   |    PartNumber: IGBT160906   |   Asin: B01M6WPWRY

ST Microelectronics IGBT GW30NC120HD Package of 2 pieces Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 20A Power - Max 220W Switching Energy: 1.66mJ (on), 4.44mJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25 C: 29ns/275ns Test Condition: 960V, 20A, 10 Ohm, 15V Reverse Recovery Time (trr): 152ns Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: TO-247-3

Features

  • ST Microelectronics IGBT
  • GW30NC120HD
  • 1200v 60a 1.66mJ (on), 4.44mJ (off)
  • TO-247-3
  • Package of 2 pieces, additional order shipped free with this
  • See more on Amazon...

Brand: STMicroelectronics   |   Manufacturer: STMictoelectronics

Amazon Price: $10.85 | as of 11/15/2018(6:39pm pst)
Availibility: Usually ships in 24 hours
List Price: $10.85

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  #2

NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 600V, 25A

Model: NTE3311   |    Mpn: NTE3311   |    Ean: 0768249484516   |    PartNumber: NTE3311   |   Asin: B008UTWFHO

NTE Electronics NTE3311 NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 600V, 25A.

Features

Brand: NTE Electronics   |   Manufacturer: NTE Electronics, Inc.

Package Dimensions: 0.3 x 4 x 5 inches (0.8 x 10.2 x 12.7 cm)

Amazon Price: $11.12 | as of 11/15/2018(6:39pm pst)
Availibility: Usually ships in 24 hours
List Price: $12.79

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  #3

(5PCS) FGPF4633RDTU IGBT N-CH 70A 330V TO-220F 4633 FGPF4633

Model: FGPF4633RDTU   |    Mpn: FGPF4633RDTU   |    Ean: 0338068118819   |    PartNumber: FGPF4633RDTU   |   Asin: B01FPUMRLO

Part NO.:FGPF4633RDTU
Package:TO-220F
Description:IGBT N-CH 70A 330V TO-220F
Supplier:SICSTOCK
IGBT Type:Trench
Voltage - Collector Emitter Breakdown (Max):330V
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 70A
Current - Collector (Ic) (Max):-
Current - Collector Pulsed (Icm):-
Power - Max:30.5W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25 C:-
Test Condition:-
Reverse Recovery Time (trr):-
Mounting Type:Through Hole
Supplier Device Package:TO-220F

Features

Brand: SICSTOCK   |   Manufacturer: SICSTOCK

Amazon Price: $7.00 | as of 11/15/2018(6:39pm pst)
Availibility: Usually ships in 1-2 business days
List Price: $7.00

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  #4

Uxcell a11080600ux0034 IRG4PF50WD 51A Insulated Gate Transistor IGBT, 900V

Model: a11080600ux0034   |    Mpn: a11080600ux0034   |    Ean: 0608641507218   |    PartNumber: a11080600ux0034   |   Asin: B0148LG4Y2

Optimized for use in welding and switching-mode power supply applications. Low igbt conduction losses, to-247ac package.

Features

  • Product name : insulated gate Transistor; model No. : irg4pf50wd
  • Collector current : 51A; collector-emitter Voltage : 900V
  • Pin Length : 15mm/0. 59; Hole diameter : 3. 5mm/0. 13
  • Body dimension : 20 x 15 x 5mm/0. 78 x 0. 59 x 0. 2(L*w*t); net weight : 6G
  • Package content : 1 x igbt
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Brand: uxcell   |   Manufacturer: Uxcell

Package Dimensions: 0.2 x 3 x 3 inches (0.5 x 7.6 x 7.6 cm)

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  #5

Eiechip BTW69-1200 thyristor 50A/ 1200V to- 3P 5pcs/lot

 Ean: 0734779676189   |    PartNumber: 5pcs/lot BTW69-1200   |   Asin: B07GSV73RS


Product Name :EiechipThyristor;

Model : BTW69-1200

Voltage : 1200V;

RMS on-state Current : 50A

Mounting Hole Diameter : 4mm/ 0.16';

Pin Size : 16 x 5.04mm/ 0.63' x 0.2' ( L* Pitch)

Body Dimension : 36 x 15 x 4mm/ 1.4' x 0.6' x 0.16' (L*W*T);

Weight : 5g

Package Content : 1 x Thyristor

Features

  • Available in high power packages, the BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control.
  • Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities.
  • Thanks to their internal ceramic pad, they provide high voltage insulation (2500V RMS), complying with UL standards
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Brand: Eiechip   |   Manufacturer: Eiechip®

Package Dimensions: 1.18 x 2.36 x 3.94 inches (3.0 x 6.0 x 10.0 cm)

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  #6

5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed

 Ean: 9320689526143   |   Asin: B01MTJJCKL

5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed

Features

  • 5-15 days with tracking.
  • 5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed
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Brand: Balance World Inc   |   Manufacturer: Balance World Inc

Amazon Price: $14.99 | as of 11/15/2018(6:39pm pst)
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  #7

5PCS RJP63F3A Encapsulation:TO220,Silicon N Channel IGBT High

 Ean: 9320689526150   |    PartNumber: -   |   Asin: B01M5L9FRA

5PCS RJP63F3A Manu:N/A Encapsulation:TO220,Silicon N Channel IGBT High

Features

  • 5-15 days with tracking.
  • 5PCS RJP63F3A Encapsulation:TO220,Silicon N Channel IGBT High
  • See more on Amazon...

Brand: Balance World Inc   |   Manufacturer: Balance World Inc

Amazon Price: $8.99 | as of 11/15/2018(6:39pm pst)
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  #8

IGBT Power Transistor FGL60N100 1000V 60A 180W TO264

 Ean: 0694773842808   |   Asin: B07KG6KVQY

Features

Brand: Generic   |   Manufacturer: Generic

Amazon Price: $10.95 | as of 11/15/2018(6:39pm pst)
Availibility: Usually ships in 1-2 business days
List Price: $10.95

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  #9

Electronics Stocks Ic 100% Original Authentic Fgh40N60Sfd Fgh40N60 40N60 600V 40A Igbt To-247

 Ean: 0696559748144   |    PartNumber: ELT-D41D8CD98F00B204E9800998ECF8427E   |   Asin: B07KDH195X

Welcome to my store Product number: FGH40N60SFD Product Package includes: TO-247AC product type: IGBT single tube Brand ONSEMI Product Descriptions: Fairchild launched 600V insulated gate (IGBT) bipolar transistor FGH40N60SFD, rated power 40A, voltage 600V. By reducing power consumption and improve the IGBT best performance. FGH40N60SFD adopt TO-247 package, At the same gate resistance of 20A and Ice case, SFD off losses 50% lower than its competitors, because its off di / dt faster. In the off dv / dt and the same gate resistance to different conditions, FGH40N60SFD IGBT turn-off losses low. FGH40N60SFD mainly used in solar inverters and UPS, as well as welding and other intermediate frequency DC / DC converters. Parameter Descriptions: Category Discrete Semiconductor Products Family IGBT - Single Series - IGBT Type Field Stop Voltage - collector-emitter breakdown (Max) 600V Different Vge, Ic when Vce (on) 2.9V @ 15V, 40A Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Power - Max 290W Switching Energy1.13mJ (open), 1.44mJ (off) Input Type Standard Gate Charge120nC Td (on / off) A 25 C25ns / 115ns Test Condition400V, 40A, 10 ohms, 15V Reverse Recovery Time (trr) 45ns Packaging Tube Package / Case TO-247-3 Mounting Type Through Hole Supplier Device Package TO-247 Features: Package includes: TO-247 High current capability Low saturation voltage: VCE (sat) = 2.3V @ IC = 40A High input impedance Fast switching higher power integration RoHS compliant all Orders in send package prior to, after Anti-static bag package Guarantee product high quality Hand over Buyers. we committed All products transport Guarantee 100%Safety. step 1: step 2: ste

Features

  • Package Includes: TO-247AC | product type: IGBT single tube | Brand ONSEMI | Product
  • Fairchild launched 600V insulated gate (IGBT) bipolar transistor FGH40N60SFD, rated power 40A, voltage 600V. By reducing power consumption and improve the IGBT best performance.
  • FGH40N60SFD adopt TO-247 package, At the same gate resistance of 20A and Ice case, SFD off losses 50% lower than its competitors, because its off di / dt faster.
  • In the off dv / dt and the same gate resistance to different conditions, FGH40N60SFD IGBT turn-off losses low.
  • See more on Amazon...

Brand: ELATO   |   Manufacturer: ELATO

Amazon Price: $43.99 | as of 11/15/2018(6:39pm pst)
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  #10

IGBT Power transistor FGL60N100 1000V 60A 180W TO264

 Ean: 0694773840675   |   Asin: B07KC3B4KB

Features

Brand: Generic   |   Manufacturer: Generic

Amazon Price: $10.95 | as of 11/15/2018(6:39pm pst)
Availibility: Usually ships in 1-2 business days
List Price: $10.95

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Looking For Something Else? Search

Most Popular
New Releases

  1. (PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
  2. NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed ...
  3. (5PCS) FGPF4633RDTU IGBT N-CH 70A 330V TO-220F 4633 FGPF4633
  4. Uxcell a11080600ux0034 IRG4PF50WD 51A Insulated Gate Transistor IGBT, 900V
  5. Eiechip BTW69-1200 thyristor 50A/ 1200V to- 3P 5pcs/lot
  6. 5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed
  7. 5PCS RJP63F3A Encapsulation:TO220,Silicon N Channel IGBT High

Most Wished For

  1. (PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
  2. NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed ...
  3. (5PCS) FGPF4633RDTU IGBT N-CH 70A 330V TO-220F 4633 FGPF4633
  4. Uxcell a11080600ux0034 IRG4PF50WD 51A Insulated Gate Transistor IGBT, 900V
  5. Eiechip BTW69-1200 thyristor 50A/ 1200V to- 3P 5pcs/lot
  6. 5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed
  7. 5PCS RJP63F3A Encapsulation:TO220,Silicon N Channel IGBT High

Most Gifted

  1. (PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
  2. NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed ...
  3. (5PCS) FGPF4633RDTU IGBT N-CH 70A 330V TO-220F 4633 FGPF4633
  4. Uxcell a11080600ux0034 IRG4PF50WD 51A Insulated Gate Transistor IGBT, 900V
  5. Eiechip BTW69-1200 thyristor 50A/ 1200V to- 3P 5pcs/lot
  6. 5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed
  7. 5PCS RJP63F3A Encapsulation:TO220,Silicon N Channel IGBT High

Top Selling

  1. (PG #28) 2pcs STMicroelectronics IGBT 1200V 60A 220W TO247 STGW30NC120HD
  2. NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed ...
  3. (5PCS) FGPF4633RDTU IGBT N-CH 70A 330V TO-220F 4633 FGPF4633
  4. Uxcell a11080600ux0034 IRG4PF50WD 51A Insulated Gate Transistor IGBT, 900V
  5. Eiechip BTW69-1200 thyristor 50A/ 1200V to- 3P 5pcs/lot
  6. 5PCS RJP30E2 (600V) Encapsulation:TO-220,Silicon N Channel IGBT High Speed
  7. 5PCS RJP63F3A Encapsulation:TO220,Silicon N Channel IGBT High



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