NTE Electronics NTE320 NPN Silicon RF Power Transistor, 36V, 6 Amp
Asin: B008UTW63C | Model: NTE320 | PartNumber: NTE320 | Ean: 0768249141013 | UPC: 768249141013
As an Amazon Associate we earn a fee from qualifying purchases when you follow a link to Amazon from this page. We rank the products, but the links to Amazon are promotional.Item Package Weight:3.0 Lbs.
Country Of Origin: United States.
Item Package Dimension:5.0 " L X5.0 " W X5.0 " H.
Features
- Product Type:Electronic Component
- Item Package Dimension:5.0 L X5.0 W X5.0 H
- Item Package Weight:3.0 Lbs
- Country Of Origin: United States
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Brand: LED Group Buy | Manufacturer: NTE Electronics, Inc.
Weight: 3.00 Pounds
Amazon Price: $96.56 | as of 05/26/2024
(2:15pm pst) *DETAILSAvailability: Temporarily out of stock. We are working hard to be back in stock. Place your order and we’ll email you when we have an estimated delivery date. You won’t be charged until the item ships.
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NTE Electronics NTE3311 N-Channel Enhancement Mode Insulated Gate Bipolar Transistor for High Speed Switch, TO3P Type Package, 600V, 25A
Asin: B008UTWFHO | Model: NTE3311 | PartNumber: NTE3311 | Ean: 0768249484516 | UPC: 768249484516
Low Saturation Voltage.
Enhancement Mode.
High Speed.
Brand: NTE Electronics | Manufacturer: NTE Electronics, Inc.
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NTE Electronics NTE129 PNP Silicon Complementary Transistor for Audio Output, Video, Driver, TO-39 Case, 1A Continuous Collector Current, 80V Collector-Base Voltage
Asin: B0002FRSM6 | Model: NTE129 | PartNumber: NTE129 | Ean: 0768249026211 | UPC: 768249026211
7W Total Device Dissipation.
Package Weight : 0.018 Kilograms.
5V Emitter-Base Voltage.
Features
- 80V collector-emitter voltage
- 5V emitter-base voltage
- 7W total device dissipation
- Package Weight : 0.018 kilograms
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Weight: 0.01 pounds
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NTE Electronics NTE123AP NPN Silicon Transistor for Audio Amplifier, Switch, TO-92 Case, 0.6A Continuous Collector Current, 60V Collector-Base Voltage
Asin: B0002FRDB2 | Model: NTE123AP | PartNumber: NTE123AP | Ean: 0768249021612 | UPC: 768249021612
Country Of Origin : United States.
Unit Count: 1.0.
Package Weight: 0.006 Kilograms.
Features
- Package Dimensions: 16.4 H x 0.6 L x 8.8 W (centimetres)
- Package Weight: 0.006 kilograms
- Country of Origin : United States
- Unit count: 1.0
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Weight: 0.01 Pounds
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NTE Electronics NTE214 NPN Silicon Transistor, Darlington Driver, TO3P Type Package, 70V, 10 Amp
Asin: B008UTWZ92 | Model: NTE214 | PartNumber: NTE214 | Ean: 0768249104711 | UPC: 768249104711
Item Package Quantity:1.
Country Of Origin: Japan.
Item Package Dimension:2.5 Cm L X5.1 Cm W X15.2 Cm H.
Features
- Product Type:Electronic Component
- Item Package Dimension:2.5 cm L X5.1 cm W X15.2 cm H
- Item Package Quantity:1
- Country Of Origin: Japan
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Brand: NTE Electronics | Manufacturer: NTE Electronics, Inc.
Weight: 0.00 Pounds
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NTE Electronics NTE128 NPN Silicon Complementary Transistor for Audio Output, Video, Driver, TO-39 Case, 1A Continuous Collector Current, 140V Collector-Base Voltage
Asin: B0002FRWBS | Model: NTE128 | PartNumber: NTE128 | Ean: 0768249025313 | UPC: 768249025313
5W Total Device Dissipation.
Country Of Origin: United States.
7V Emitter-Base Voltage.
Features
- 80V collector-emitter voltage
- 7V emitter-base voltage
- 5W total device dissipation
- Country of origin: United States
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First Available: 12/12/2017
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NTE Electronics NTE2353 NPN Silicon Transistor, TV Horizontal Deflection Output with Damper Diode, TO3PML Type Package, 1500V, 10 Amp
Asin: B015WZKV9C | Model: NTE2353 | PartNumber: NTE2353 | Ean: 0768249112013 | UPC: 768249112013
On−Chip Damper Diode.
Package Dimensions: 0.254 H X 12.7 L X 3.048 W (Centimeters).
High Breakdown Voltage: Vcbo = 1500V.
Features
- High Speed: ft. = 100nsec
- High Breakdown Voltage: VCBO = 1500V
- On Chip Damper Diode
- Package Dimensions: 0.254 H x 12.7 L x 3.048 W (centimeters)
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NTE Electronics NTE2583 NPN Silicon Transistor, High Speed Switching Regulator, TO220 Full Pack Type Package, 500V, 10 Amp
Asin: B007Z7QCSA | Model: NTE2583 | PartNumber: NTE2583 | Ean: 0768249486619 | UPC: 768249486619
Wide Aso.
Fast Switching Speed.
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NTE Electronics 2N4123 Silicon NPN Transistor for General Purpose Amplifier and Switch, 200 mA, 30V (Pack of 5)
Asin: B008UFYERW | Model: 2N4123 | PartNumber: 2N4123 | Ean: 0768249016991 | UPC: 768249016991
Package Weight: 0.02 Pounds.
Country Of Origin : United States.
Package Dimensions: 0.1 H X 5.25 L X 1.5 W (Inches).
Features
- For use with general purpose amplifier and switch
- Package Dimensions: 0.1 H x 5.25 L x 1.5 W (inches)
- Package Weight: 0.02 pounds
- Country of Origin : United States
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NTE Electronics NTE37 PNP Silicon Complementary Transistor, AF Power Amplifier, High Current Switch, 160V, 12 Amp
Asin: B0002FRTY8 | Model: NTE37 | PartNumber: NTE37 | Ean: 0768249147213 | UPC: 768249147213
160Volt.
12 Amps.
High Current Switch.
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NTE Electronics NTE87 NPN Silicon Transistor for High Power Audio, Disk Head Positioner, to-3 Package, 10 Amps Continuous Collector Current, 250V Collector-Emitter Voltage
Asin: B0002FRH4K | Model: NTE87 | PartNumber: NTE87 | Ean: 0768249358619 | UPC: 768249358619
High Dc Current Gain: Hfe = 20 Min @ Ic = 2A.
For Low Distortion Complementary Designs.
Low Saturation Voltage: 2V.
Completely Characterized For Linear Operation.
Features
- High safe operating area: 1.2A @ 100V
- Completely characterized for linear operation
- High DC current gain: hFE = 20 Min @ IC = 2A
- Low saturation voltage: 2V
- For low distortion complementary designs
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NTE Electronics NTE2317 NPN Silicon Transistor, High Voltage Fast Switching Power Darlington, TO3PN Type Package, 500V, 15 Amp
Asin: B008UTWJDY | Model: NTE2317 | PartNumber: NTE2317 | Ean: 0768249108511 | UPC: 768249108511
To3pn Type Package.
15 Amps.
500 Volts.
High Ruggedness.
Features
- High performance electronic ignition Darlington
- High ruggedness
- TO3PN type package
- 500 volts
- 15 amps
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First Available: 05/15/2017
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NTE Electronics NTE280 NPN Silicon Complementary Transistor, Audio Power Amplifier, 140V, 12 Amp
Asin: B0002FRGGE | Model: NTE280 | PartNumber: NTE280 | Ean: 0768249121916 | UPC: 768249121916
140Volt.
12 Amps.
Collector–Emitter Breakdown Voltage: V(Br)Ceo = 140V.
Features
- High power dissipation: PC = 100W
- Collector emitter breakdown voltage: V(BR)CEO = 140V
- 140Volt
- 12 amps
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NTE Electronics NTE129P PNP Silicon Complementary Transistor for General Purpose Amplifier, TO-237 Case, 1A Continuous Collector Current, 100V Collector-Base Voltage
Asin: B0002FRSNK | Model: NTE129P | PartNumber: NTE129P | Ean: 0768249026419 | UPC: 768249026419
80V Collector-Emitter Voltage.
2W Power Dissipation.
5V Emitter-Base Voltage.
Exceptional Power Dissipation Capability.
Features
- High VCE ratings
- Exceptional power dissipation capability
- 80V collector-emitter voltage
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- 2W power dissipation
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First Available: 03/12/2017
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NTE Electronics NTE291 NPN Silicon Complementary Transistor, Medium Power, Switch, 130V, 4 Amp
Asin: B0002FRPEW | Model: NTE291 | PartNumber: NTE291 | Ean: 0768249124115 | UPC: 768249124115
130Volt.
4 Amps.
Medium Power Amplifier.
First Available: 03/12/2017
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Weight: 0.01 Pounds
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NTE Electronics NTE235 NPN Silicon Transistor, Final RF Power Output, TO220 Type Package, 65V, 3 Amp
Asin: B0002FRD3K | Model: NTE235 | PartNumber: NTE235 | Ean: 0768249111610 | UPC: 768249111610
65 Volts.
3 Amps.
To220 Type Package.
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NTE Electronics NTE54 NPN Silicon Complementary Transistor, TO-220 Case, 8 Amps Collector Continuous Current, 150V Collector Emitter Voltage
Asin: B01JERZGVC | Model: NTE54 | PartNumber: NTE54 | Ean: 0768249225119 | UPC: 768249225119
High Current Gain–Bandwidth Product: Ft = 30Mhz Min @ Ic = 500Ma.
For Use As A High Frequency Driver For Audio Amplifier.
Collector–Emitter Sustaining Voltage: Vceo(Sus) = 150V Min.
Features
- DC current gain specified to 4A
- Collector emitter sustaining voltage: VCEO(sus) = 150V Min
- High current gain bandwidth product: fT = 30MHz min @ IC = 500mA
- For use as a high frequency driver for audio amplifier
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Weight: 0.00 pounds
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NTE Electronics NTE312 N-Channel Silicon Junction Field Effect Transistor, TO92 Type Package
Asin: B0002FRJTS | Model: NTE312 | PartNumber: NTE312 | Ean: 0768249137610 | UPC: 768249137610
Drain And Gate Leads Separated For High Maximum Stable Gain.
For Use In Vhf Amplifiers In Fm, Tv, And Mobile Communications Equipment.
Cross−Modulation Minimized By Square−Law Transfer Characteristic.
High Trans Conductance: 4000 Mho Min At 400Mhz. Weight :0.2600 Pounds.
Features
- High Power Gain: 10dB Min at 400MHz.
- High Trans conductance: 4000 mho Min at 400MHz. Weight :0.2600 Pounds
- Drain and Gate Leads Separated for High Maximum Stable Gain
- Cross Modulation Minimized by Square Law Transfer Characteristic
- For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
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Weight: 0.00 Pounds
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NTE Electronics NTE2337 NPN Silicon Transistor, High Speed Switch, TO22O Full Pack Type Package, 900V, 7 Amp
Asin: B01JD1GZDC | Model: NTE2337 | PartNumber: NTE2337 | Ean: 0768249110613 | UPC: 768249110613
Package Weight : 3 Pounds.
Country Of Origin : Japan.
Good Linearity Of Dc Current Gain (Hfe).
Features
- Wide Area of Safety Operation (ASO)
- Good Linearity of DC Current Gain (hFE)
- Package Weight : 3 pounds
- Country of Origin : Japan
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Weight: 0.01 Pounds
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NTE Electronics NTE236 NPN Silicon Transistor, Final RF Power Output, TO220AB Type Package, 60V, 6 Amp
Asin: B00DRDJR3S | Model: NTE236 | PartNumber: NTE236 | Ean: 0768249112716 | UPC: 768249112716
Final Rf Power Output.
60 Volts.
To220ab Type Package.
High Reliability.
Features
- High power gain: Gpe 12dB, PO = 16W, f = 27MHz
- High reliability
- Final RF power output
- TO220AB type package
- 60 volts
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NTE Electronics NTE198 NPN Silicon Transistor, High Voltage Power Transistor, TO220 Type Package, 500V, 1 Amp
Asin: B00DWIG8QC | Model: NTE198 | PartNumber: NTE198 | Ean: 0768249095316 | UPC: 768249095316
500 Volts.
1 Amps.
To220 Type Package.
First Available: 03/12/2017
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Weight: 0.05 pounds
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